Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE2301B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE2301B Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 5 page ACE2301B P-Channel Enhancement Mode MOSFET VER 1.3 1 Description ACE2301B is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package with excellent thermal and electrical capabilities. Features V DS =-20V, VGS 8V, ID=-2.3A R DS(ON) @VGS=-4.5V/ID -2.8A, 100mR(Typ.) R DS(ON) @VGS=-2.5V/ID -2A, 120mR(Typ.) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Drain Current Continuous ID -2.3 A Pulsed (1) -10 Power Dissipation 25 OC PD 750 mW 70 OC 480 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOT-23-3 3 1 2 SOT-23-3 Description 1 Gate 2 Source 3 Drain |
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