Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE2302B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE2302B Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE2302B N-Channel Enhancement Mode MOSFET VER 1.2 1 Description The ACE2302B uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. Features V DS=20V I D=6A (VGS=10V) R DS(ON) =26 mΩ (typ.) @ V GS=10V R DS(ON) =28 mΩ (typ.) @ V GS=4.5V R DS(ON) =42 mΩ (typ.) @ V GS=2.5V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Drain Current (Continuous) TA=25℃ ID 6 A TA=70℃ 4.8 Drain Current (Pulsed) IDM 20 A Power Dissipation TA=25℃ PD 1.4 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Packaging Type SOT-23-3L 3 1 2 Ordering information ACE2302B XX + H SOT-23-3L Description Function 1 G Gate 2 S Source 3 D Drain BM : SOT-23-3L Pb - free Halogen - free |
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