Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE2304B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE2304B Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 5 page ACE2304B N-Channel Enhancement Mode MOSFET VER 1.2 1 Description The ACE2304BBM+ uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Features 30V/5A R DS(ON) =26 mΩ (typ.) @ V GS=10V R DS(ON) =37 mΩ (typ.) @ V GS=4.5V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) TA=25℃ ID 5 A TA=70℃ 4.1 Drain Current (Pulsed) IDM 20 A Power Dissipation TA=25℃ PD 1.4 W TA=70℃ 1 Operating temperature / storage temperature TJ/TSTG -55~150 ℃ Packaging Type SOT-23-3L 3 1 2 SOT-23-3L Description Function 1 G Gate 2 S Source 3 D Drain |
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