Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE2305B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE2305B Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE2305B P-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Description The ACE2305B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. Features V DS =-20V, ID=-4A R DS(ON) <55m Ω @ V GS=-4.5V R DS(ON) <63m Ω @ V GS=-2.5V R DS(ON) <83m Ω @ V GS=-1.8V ESD Protected: 3000V HBM Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Drain Current (Continuous) TA=25 OC ID -4 A TA=70 OC -3.2 Drain Current (Pulse) IDM -30 A Power Dissipation TA=25 OC PD 1.4 W Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOT-23-3L D 3 1 2 G S Ordering information ACE2305B XX + H SOT-23-3L Description 1 Gate 2 Source 3 Drain BM : SOT-23-3L Pb - free Halogen - free |
Ähnliche Teilenummer - ACE2305B |
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Ähnliche Beschreibung - ACE2305B |
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