Datenblatt-Suchmaschine für elektronische Bauteile |
|
ACE2341B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
|
ACE2341B Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE2341B P-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Description The ACE2341B uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 1.8V. This device is suitable for use as a load switch or other general applications. Features V DS =-20V, ID=-4.1A R DS(ON) <65m Ω @ V GS=-4.5V R DS(ON) <85 mΩ @ V GS=-2.5V R DS(ON) <125 mΩ @ V GS=-1.8V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Drain Current (Continuous) TA=25 OC ID -4.1 A TA=70 OC -3.2 Drain Current (Pulse) IDM -30 A Power Dissipation TA=25 OC PD 1.4 W Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOT-23-3L D 3 1 2 G S Ordering information ACE2341B XX + H SOT-23-3L Description 1 Gate 2 Source 3 Drain BM : SOT-23-3L Pb - free Halogen - free |
Ähnliche Teilenummer - ACE2341B |
|
Ähnliche Beschreibung - ACE2341B |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |