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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF6646TRPBF Datenblatt(PDF) 1 Page - International Rectifier |
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IRF6646TRPBF Datenblatt(HTML) 1 Page - International Rectifier |
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1 / 10 page  www.irf.com 1 08/24/06 IRF6646PbF IRF6646TRPbF DirectFET Power MOSFET DirectFET ISOMETRIC MN Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage Typical values (unless otherwise specified) S Q SX ST MQ M X MT MN Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A 230 Max. 9.6 68 96 ±20 80 12 7.2 Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage 4 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) 0 0.01 0.02 0.03 0.04 0.05 ID = 7.2A TJ = 25°C TJ = 125°C 0 10203040 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 VDS= 40V VDS= 16V ID= 7.2A l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 8.8mH, RG = 25Ω, IAS = 7.2A. Notes: VDSS VGS 80V max ±20V max RDS(on) 7.6m Ω@ 10V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 36nC 12nC 2.0nC 48nC 18nC 3.8V Description The IRF6646PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6646PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V to 60V ETSI input voltage range systems, and is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters. PD - 97224A |
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