Datenblatt-Suchmaschine für elektronische Bauteile |
|
FDD86252 Datenblatt(PDF) 4 Page - Fairchild Semiconductor |
|
FDD86252 Datenblatt(HTML) 4 Page - Fairchild Semiconductor |
4 / 6 page ©2011 Fairchild Semiconductor Corporation FDD86252 Rev.C www.fairchildsemi.com 4 Figure 7. 036 9 12 0 2 4 6 8 10 ID = 5 A VDD = 50 V VDD = 100 V Qg, GATE CHARGE (nC) VDD = 75 V Gate Charge Characteristics Figure 8. 0.1 1 10 100 1 10 100 1000 f = 1 MHz VGS = 0 V VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss Capacitance vs Drain to Source Voltage Figure9. 0.001 0.01 0.1 1 10 1 10 50 TJ = 100 oC TJ = 25 oC TJ = 125 oC t AV, TIME IN AVALANCHE (ms) UnclampedInductive Switching Capability Figure 10. 25 50 75 100 125 150 0 5 10 15 20 25 30 VGS = 6 V RTJC = 1.4 o C/W VGS = 10 V T C , CASE TEMPERATURE ( o C ) Maximum Continuous Drain Current vs Case Temperature Figure 11. 110 100 400 0.1 1 10 50 10 ms 100 Ps DC 1 ms VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED RTJC = 1.4 oC/W TC = 25 oC Forward BiasSafe Operating Area Figure 12. 10 -5 10 -4 10 -3 10 -2 10 -1 1 50 100 1000 5000 SINGLE PULSE RTJC = 1.4 oC/W TC = 25 oC t, PULSE WIDTH (sec) Single Pulse Maximum Power Dissipation Typical Characteristics T J = 25 °C unless otherwise noted |
Ähnliche Teilenummer - FDD86252 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |