Datenblatt-Suchmaschine für elektronische Bauteile |
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FDT86246 Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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FDT86246 Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page ©2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDT86246 Rev.C Electrical Characteristics T J = 25 °C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C 104 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 3.1 4.0 V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -9 mV/°C rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 2 A 194 236 m Ω VGS = 6 V, ID = 1.7 A 231 329 VGS = 10 V, ID = 2 A, TJ = 125 °C 349 425 gFS Forward Transconductance VDS = 10 V, ID = 2 A 5 S Ciss Input Capacitance VDS = 75 V, VGS = 0 V, f = 1 MHz 161 215 pF Coss Output Capacitance 21 30 pF Crss Reverse Transfer Capacitance 1.6 5 pF Rg Gate Resistance 0.9 Ω td(on) Turn-On Delay Time VDD = 75 V, ID = 2 A, VGS = 10 V, RGEN = 6 Ω 7.8 16 ns tr Rise Time 2.3 10 ns td(off) Turn-Off Delay Time 4.6 10 ns tf Fall Time 1.2 10 ns Qg(TOT) Total Gate Charge VGS = 0 V to 10 V VDD = 75 V, ID = 2 A 2.9 4 nC Qg(TOT) Total Gate Charge VGS = 0 V to 5 V 1.7 3 Qgs Total Gate Charge 0.9 nC Qgd Gate to Drain “Miller” Charge 0.8 nC VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A (Note 2) 0.84 1.3 V trr Reverse Recovery Time IF = 2 A, di/dt = 100 A/μs 44 71 ns Qrr Reverse Recovery Charge 31 49 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 1.0 mH, IAS = 4.0 A, VDD = 135 V, VGS = 10 V. 55 °C/W when mounted on a 1 in2 pad of 2 oz copper a) 118 °C/W when mounted on a minimum pad of 2 oz copper b) |
Ähnliche Teilenummer - FDT86246 |
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Ähnliche Beschreibung - FDT86246 |
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