FDT86246 datasheet(2/6 Pages) FAIRCHILD

Teilenummer	FDT86246

Bauteilbeschribung	N-Channel Power Trench짰 MOSFET 150 V, 2 A, 236 m廓

Download	6 Pages

Scroll/Zoom	100%

Hersteller	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

Logo

2 / 6 page

2

www.fairchildsemi.com

FDT86246 Rev.C

Electrical Characteristics T

J = 25 °C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain to Source Breakdown Voltage

ID = 250 μA, VGS = 0 V

150

V

ΔBV

DSS

ΔT

J

Breakdown Voltage Temperature

Coefficient

ID = 250 μA, referenced to 25 °C

104

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 120 V, VGS = 0 V

1

μA

IGSS

Gate to Source Leakage Current

VGS = ±20 V, VDS = 0 V

±100

nA

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 250 μA

2.0

3.1

4.0

V

ΔV

GS(th)

ΔT

J

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 250 μA, referenced to 25 °C

-9

mV/°C

rDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 2 A

194

236

m

Ω

VGS = 6 V, ID = 1.7 A

231

329

VGS = 10 V, ID = 2 A, TJ = 125 °C

349

425

gFS

Forward Transconductance

VDS = 10 V, ID = 2 A

5

S

Ciss

Input Capacitance

VDS = 75 V, VGS = 0 V,

f = 1 MHz

161

215

pF

Coss

Output Capacitance

21

30

pF

Crss

Reverse Transfer Capacitance

1.6

5

pF

Rg

Gate Resistance

0.9

Ω

td(on)

Turn-On Delay Time

VDD = 75 V, ID = 2 A,

VGS = 10 V, RGEN = 6 Ω

7.8

16

ns

tr

Rise Time

2.3

10

ns

td(off)

Turn-Off Delay Time

4.6

10

ns

tf

Fall Time

1.2

10

ns

Qg(TOT)

Total Gate Charge

VGS = 0 V to 10 V

VDD = 75 V,

ID = 2 A

2.9

4

nC

Qg(TOT)

Total Gate Charge

VGS = 0 V to 5 V

1.7

3

Qgs

Total Gate Charge

0.9

nC

Qgd

Gate to Drain “Miller” Charge

0.8

nC

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, IS = 2 A

(Note 2)

0.84

1.3

V

trr

Reverse Recovery Time

IF = 2 A, di/dt = 100 A/μs

44

71

ns

Qrr

Reverse Recovery Charge

31

49

nC

NOTES:

1. RθJA is determined with the device mounted on a 1 in

2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by

the user's board design.

2. Pulse Test: Pulse Width < 300

μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C; N-ch: L = 1.0 mH, IAS = 4.0 A, VDD = 135 V, VGS = 10 V.

55 °C/W when mounted on a

1 in2 pad of 2 oz copper

a)

118 °C/W when mounted on

a minimum pad of 2 oz copper

b)

Ähnliche Beschreibung - FDT86246

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Fairchild Semiconductor	FDC86244	301Kb / 7P	N-Channel Power Trench짰 MOSFET 150 V, 2.3 A, 144 m廓
	FDMC86244	324Kb / 7P	N-Channel Power Trench짰 MOSFET 150 V, 9.4 A, 134 m廓
	FDMS86200	319Kb / 7P	N-Channel Power Trench짰 MOSFET 150 V, 49 A, 18 m廓
	FDS86252	263Kb / 6P	N-Channel Power Trench짰 MOSFET 150 V, 4.5 A, 55 m廓
	FDMC86248	262Kb / 7P	N-Channel Power Trench짰 MOSFET 150 V, 13 A, 90 m廓
	FDMC8884	358Kb / 7P	N-Channel Power Trench짰 MOSFET 30 V, 15 A, 19 m廓
	FDMS8622	278Kb / 7P	N-Channel Power Trench짰 MOSFET 100 V, 16.5 A, 56 m廓
	FDMC7570S	372Kb / 8P	N-Channel Power Trench짰 SyncFET 25 V, 40 A, 2 m廓
	FDC8884	267Kb / 7P	N-Channel Power Trench짰 MOSFET 30 V, 6.5 A, 23 m廓
	FDMS86102LZ	306Kb / 7P	N-Channel Power Trench짰 MOSFET 100 V, 22 A, 25 m廓

More results

FDT86246 Datenblatt(PDF) 2 Page - Fairchild Semiconductor

FDT86246 Datenblatt(HTML) 2 Page - Fairchild Semiconductor

Ähnliche Teilenummer - FDT86246

Ähnliche Beschreibung - FDT86246

Html Pages

1 2 3 4 5 6

Datenblatt Download

Link URL