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FQD18N20V2 Datenblatt(PDF) 2 Page - Fairchild Semiconductor

Teilenummer FQD18N20V2
Bauteilbeschribung  200V N-Channel MOSFET
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQD18N20V2 Datenblatt(HTML) 2 Page - Fairchild Semiconductor

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Rev. B2, January 2009
©2009 Fairchild Semiconductor Corporation
Electrical Characteristics
TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.58mH, IAS = 18A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
200
--
--
V
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.25
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 200 V, VGS = 0 V
--
--
1
µA
VDS = 160 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 7.5 A
--
0.12
0.14
gFS
Forward Transconductance
VDS = 40 V, ID = 7.5 A
(Note 4)
--
11
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
830
1080
pF
Coss
Output Capacitance
--
200
260
pF
Crss
Reverse Transfer Capacitance
--
25
33
pF
Coss
Output Capacitance
VDS = 160 V, VGS = 0 V,
f = 1.0 MHz
--
70
--
pF
Coss eff. Effective Output Capacitance
VDS = 0V to 160 V, VGS = 0 V
--
135
--
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 100 V, ID = 18 A,
RG = 25 Ω
(Note 4, 5)
--
16
40
ns
tr
Turn-On Rise Time
--
133
275
ns
td(off)
Turn-Off Delay Time
--
38
85
ns
tf
Turn-Off Fall Time
--
62
135
ns
Qg
Total Gate Charge
VDS = 160 V, ID = 18 A,
VGS = 10 V
(Note 4, 5)
--
20
26
nC
Qgs
Gate-Source Charge
--
5.6
--
nC
Qgd
Gate-Drain Charge
--
10
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
15
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
60
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 15 A
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 18 A,
dIF / dt = 100 A/µs
(Note 4)
--
158
--
ns
Qrr
Reverse Recovery Charge
--
1.0
--
µC


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