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SIZ710DT Datenblatt(Datasheet) 2 Page - Vishay Siliconix

Teile-Nr. SIZ710DT
Beschreibung  N-Channel 20 V (D-S) MOSFETs
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Hersteller  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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Document Number: 65733
S11-2379-Rev. B, 28-Nov-11
Vishay Siliconix
SiZ710DT
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
 300 µs, duty cycle  2 %.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
Ch-1
20
V
VGS = 0 V, ID = 250 µA
Ch-2
20
VDS Temperature Coefficient
V
DS/TJ
ID = 250 µA
Ch-1
19
mV/°C
ID = 250 µA
Ch-2
20
VGS(th) Temperature Coefficient
V
GS(th)/TJ
ID = 250 µA
Ch-1
- 4.8
ID = 250 µA
Ch-2
- 5.3
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Ch-1
1
2.2
V
VDS = VGS, ID = 250 µA
Ch-2
1
2.2
Gate Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Ch-1
± 100
nA
Ch-2
± 100
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
Ch-1
1
µA
VDS = 20 V, VGS = 0 V
Ch-2
1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
Ch-1
5
VDS = 20 V, VGS = 0 V, TJ = 55 °C
Ch-2
5
On-State Drain Currentb
ID(on)
VDS 5 V, VGS = 10 V
Ch-1
15
A
VDS 5 V, VGS = 10 V
Ch-2
20
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V, ID = 19 A
Ch-1
0.0055 0.0068
VGS = 10 V, ID = 20 A
Ch-2
0.0027 0.0033
VGS = 4.5 V, ID = 16.5 A
Ch-1
0.0072 0.0090
VGS = 4.5 V, ID = 20 A
Ch-2
0.0034 0.0043
Forward Transconductanceb
gfs
VDS = 10 V, ID = 19 A
Ch-1
45
S
VDS = 10 V, ID = 20 A
Ch-2
85
Dynamica
Input Capacitance
Ciss
Channel-1
VDS = 10 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS = 10 V, VGS = 0 V, f = 1 MHz
Ch-1
820
pF
Ch-2
2310
Output Capacitance
Coss
Ch-1
290
Ch-2
730
Reverse Transfer Capacitance
Crss
Ch-1
115
Ch-2
305
Total Gate Charge
Qg
VDS = 10 V, VGS = 10 V, ID = 19 A
Ch-1
11.5
18
nC
VDS = 10 V, VGS = 10 V, ID = 20 A
Ch-2
38
60
Channel-1
VDS = 10 V, VGS = 4.5 V, ID = 16.8 A
Channel-2
VDS = 10 V, VGS = 4.5 V, ID = 20 A
Ch-1
6.9
11
Ch-2
18.2
28
Gate-Source Charge
Qgs
Ch-1
2.4
Ch-2
6.6
Gate-Drain Charge
Qgd
Ch-1
1.7
Ch-2
4.8
Gate Resistance
Rg
f = 1 MHz
Ch-1
0.3
1.3
2.6
Ch-2
0.2
0.8
1.6




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