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SLD304XT-24 Datenblatt(PDF) 3 Page - Sony Corporation

Teilenummer SLD304XT-24
Bauteilbeschribung  1000mW High Power Laser Diode
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Hersteller  SONY [Sony Corporation]
Direct Link  http://www.sony.co.jp
Logo SONY - Sony Corporation

SLD304XT-24 Datenblatt(HTML) 3 Page - Sony Corporation

  SLD304XT-24 Datasheet HTML 1Page - Sony Corporation SLD304XT-24 Datasheet HTML 2Page - Sony Corporation SLD304XT-24 Datasheet HTML 3Page - Sony Corporation SLD304XT-24 Datasheet HTML 4Page - Sony Corporation SLD304XT-24 Datasheet HTML 5Page - Sony Corporation SLD304XT-24 Datasheet HTML 6Page - Sony Corporation SLD304XT-24 Datasheet HTML 7Page - Sony Corporation SLD304XT-24 Datasheet HTML 8Page - Sony Corporation  
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SLD304XT
Example of Representative Characteristics
Optical power output vs. Forward current characteristics
IF – Forward current [mA]
0
500
1000
1500
2000
0
500
1000
Optical power output vs. Monitor current characteristics
Imon – Monitor current [mA]
0
1
0.5
0
1000
500
Threshold current vs. Temperature characteristics
Tth – Thermistor temperature [
°C]
–10
0
10
20
30
100
1000
500
Power dependence of far field pattern
(parallel to junction)
Angle [degree]
–30
–20
0
–10
10
20
30
780
790
800
810
820
830
Oscillation wavelength vs. Temperature characteristics
Tth – Thermistor temperature [
°C]
–10
0
10
20
30
40
Power dependence of near field pattern
200
µm
Tth = –10
°C
Tth = 0
°C
Tth = 25
°C
Tth = 30
°C
Tth = 15
°C
Tth = 15
°C
Tth = 0
°C
Tth = 25
°C
Tth = 30
°C
Tth = 25
°C
Tth = 25
°C
PO = 900mW
PO =
900mW
PO = 900mW
PO = 800mW
PO = 600mW
PO = 400mW
PO = 200mW
PO =
800mW
PO =
600mW
PO =
400mW
PO =
200mW
Tth = –10
°C


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