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2N2327 Datenblatt(PDF) 2 Page - Comset Semiconductor

Teilenummer 2N2327
Bauteilbeschribung  SILICON THYRISTORS
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Hersteller  COMSET [Comset Semiconductor]
Direct Link  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

2N2327 Datenblatt(HTML) 2 Page - Comset Semiconductor

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2N2327 thur 2N2329
12/11/2012
COMSET SEMICONDUCTORS
2 | 3
ELECTRICAL CHARACTERISTICS (*)
TJ=25°C unless otherwise noted, RGK=1000Ω
Symbol
Ratings
2N2327
2N2328
2N2329
Unit
VDRM
Peak Forward Blocking Voltage
(1)
Min :
250
300
400
V
IRRM
Peak Reverse Blocking Current
(Rated VDRM, TJ =125°C)
Max : 100
µA
IDRM
Peak Forward Blocking Current
(Rated VDRM, TJ =125°C)
Max : 100
µA
VT
Forward « on » Voltage
IT =1.0 A Peak
Max : 1.5
V
IT =1.0 A Peak
TC =85°C
Max : 2.0
IGT
Gate Trigger Current (2)
Anode Voltage=6.0 Vdc, RL=100Ω
Max : 200
µA
Anode Voltage=6.0 Vdc, RL=100Ω
TC=-65°C
Max : 350
VGT
Gate Trigger Voltage
Anode Voltage=6.0 V, RL=100Ω
Max : 0.8
V
Anode Voltage=6.0 V, RL=100Ω
TC=-65°C
Max : 1.0
VDRM = Rated, RL=100Ω
TJ=125°C
Min : 0.1
IH
Holding Current
Anode Voltage=6.0 V
Max : 2.0
mA
Anode Voltage=6.0 V
TC=-65°C
Max : 3.0
Anode Voltage=6.0 V
TC=125°C
Min : 0.15
(*) JEDEC Registered Values
(1) VRSM and VDRM can be applied for all types on a continuous dc basis without incurring damage.
(2) RGK current is not included in measurement.


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