BU2508AF datasheet(2/3 Pages) COMSET

Teilenummer	BU2508AF

Bauteilbeschribung	NPN SILICON POWER TRANSISTORS

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Hersteller	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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2 / 3 page

NPN BU2508AF

25/10/2012

COMSET SEMICONDUCTORS

2/3

08/11/2012

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VCEO(SUS)

Collector-Emitter Sustaining

Voltage

IC= 100mA

IB= 0, L= 25mH

700

-

V

V(BR)EBO

Emitter-Base Breakdown

Voltage

IE= 1mA

IC= 0

7.5

-

V

VCE(sat)

Collector-Emitter Saturation

Voltage

IC= 4.5A

IB= 1.1A

-

1.0

V

VBE(sat)

Base-Emitter Saturation

Voltage

IC= 4.5A

IB= 1.7A

-

1.1

V

ICES

Collector Cutoff Current

VCE= 1500V

VBE= 0

-

1.0

mA

VCE= 1500V, VBE= 0

TC=125°C

-

2.0

IEBO

Emitter Cutoff Current

VEB= 7.5V

IC= 0

-

1.0

mA

hFE

DC Current Gain

IC= 0.1A

VCE= 5V

-

13

-

hFE

DC Current Gain

IC= 4.5A

VCE= 1V

4

-

7

-

COB

Output Capacitance

IE= 0; VCB= 10V

ftest= 1MHz

-

80

-

pF

Switching times

tstg

Storage Time

IC= 4.5A , IB(end)= 1.1A

LB= 6µH

-VBB= 4V; (-dIB/dt=

0.6A/µs)

-

6.0

µs

tf

Fall Time

-

0.6

µs

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