Datenblatt-Suchmaschine für elektronische Bauteile |
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TIP112 Datenblatt(PDF) 1 Page - Comset Semiconductor |
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TIP112 Datenblatt(HTML) 1 Page - Comset Semiconductor |
1 / 3 page NPN TIP110-111-112 05/10/2012 COMSET SEMICONDUCTORS 1 |3 SEMICONDUCTORS SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. PNP complements are TIP115-116-117 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage TIP110 60 V TIP111 80 TIP112 100 VCEO Collector-Emitter Voltage TIP110 60 V TIP111 80 TIP112 100 VEBO Emitter-Base Voltage TIP110 5 V TIP111 TIP112 IC Collector Current TIP110 2 A TIP111 TIP112 ICM Collector Peak Current TIP110 4 A TIP111 TIP112 IB Base Current TIP110 50 mA TIP111 TIP112 PT Power Dissipation @ Tc < 25° TIP110 50 Watts TIP111 TIP112 @ Ta < 25° TIP110 2 TIP111 TIP112 TJ Junction Temperature TIP110 150 °C TIP111 TIP112 Ts Storage Temperature range TIP110 -65 to +150 TIP111 TIP112 |
Ähnliche Teilenummer - TIP112 |
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Ähnliche Beschreibung - TIP112 |
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