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FM21LD16-60-BG Datenblatt(PDF) 1 Page - Cypress Semiconductor

Teilenummer FM21LD16-60-BG
Bauteilbeschribung  2Mbit F-RAM Memory
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Hersteller  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM21LD16-60-BG Datenblatt(HTML) 1 Page - Cypress Semiconductor

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This product conforms to specifications per the terms of the Ramtron
Ramtron International Corporation
standard warranty. The product has completed Ramtron’s internal
1850 Ramtron Drive, Colorado Springs, CO 80921
qualification testing and has reached production status.
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 3.0
Oct. 2012
Page 1 of 15
FM21LD16
2Mbit F-RAM Memory
Features
2Mbit Ferroelectric Nonvolatile RAM
Organized as 128Kx16
Configurable as 256Kx8 Using /UB, /LB
10
14 Read/Write Cycles
NoDelay™ Writes
Page Mode Operation to 33MHz
Advanced High-Reliability Ferroelectric Process
SRAM Compatible
JEDEC 128Kx16 SRAM Pinout
60 ns Access Time, 110 ns Cycle Time
Advanced Features
Software Programmable Block Write Protect
Superior to Battery-backed SRAM Modules
No Battery Concerns
Monolithic Reliability
True Surface Mount Solution, No Rework Steps
Superior for Moisture, Shock, and Vibration
Low Power Operation
2.7V – 3.6V Power Supply
Low Standby Current (90µA typ.)
Low Active Current (8 mA typ.)
Industry Standard Configuration
Industrial Temperature -40 C to +85 C
48-ball “Green”/RoHS FBGA package
Pin compatible with FM22LD16 (4Mb) and
FM23MLD16 (8Mb)
Description
The FM21LD16 is a 128Kx16 nonvolatile memory
that reads and writes like a standard SRAM. A
ferroelectric random access memory or F-RAM is
nonvolatile, which means that data is retained after
power is removed. It provides data retention for over
10 years while eliminating the reliability concerns,
functional
disadvantages,
and
system
design
complexities of battery-backed SRAM (BBSRAM).
Fast write timing and high write endurance make the
F-RAM superior to other types of memory.
In-system operation of the FM21LD16 is very similar
to other RAM devices and can be used as a drop-in
replacement for standard SRAM. Read and write
cycles may be triggered by /CE or simply by
changing the address. The F-RAM memory is
nonvolatile due to its unique ferroelectric memory
process. These features make the FM21LD16 ideal
for
nonvolatile
memory
applications
requiring
frequent or rapid writes in the form of an SRAM.
The FM21LD16 includes a low voltage monitor that
blocks access to the memory array when VDD drops
below VDD min. The memory is protected against an
inadvertent access and data corruption under this
condition.
The
device
also
features
software-
controlled write protection. The memory array is
divided into 8 uniform blocks, each of which can be
individually write protected.
The device is available in a 48-ball FBGA package.
Device specifications are guaranteed over industrial
temperature range –40°C to +85°C.
Pin Configuration
/LB
/OE
A0
A1
A2
NC
DQ8
/UB
A3
A4
/CE
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
VSS
DQ11
NC
A7
DQ3
VDD
VDD
DQ12
NC
A16
DQ4
VSS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
NC
A12
A13
/WE
DQ7
NC
A8
A9
A10
A11
NC
1
2
3
4
5
6
A
B
C
D
E
F
G
H
Top View (Ball Down)
Ordering Information
FM21LD16-60-BG
60 ns access, 48-ball
“Green”/RoHS FBGA
FM21LD16-60-BGTR
60 ns access, 48-ball
“Green”/RoHS FBGA,
Tape & Reel


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