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2SJ661 Datenblatt(Datasheet) 1 Page - Sanyo Semicon Device

Teile-Nr. 2SJ661
Beschreibung  General-Purpose Switching Device Applications
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Hersteller  SANYO [Sanyo Semicon Device]
Homepage  http://www.ssdc-jp.com/eng/
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2SJ661
No.8586-1/9
1 : Gate
2 : Drain
3 : Source
SANYO : TO-262-3L
10.0
5.3
1.27
1.47
0.8
2.54
2.54
4.5
8.0
1.3
0.5
1
2
3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TO-263-2L
10.0
5.3
1.27
0.8
2.54
2.54
0.254
4.5
8.0
1.3
0.5
12
3
4
1
3
2, 4
J661
LOT No.
DL
Features
ON-resistance RDS(on)1=29.5mΩ(typ.)
Input capacitance Ciss=4360pF (typ.)
4V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--38
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
--152
A
Allowable Power Dissipation
PD
1.65
W
Tc=25°C
65
W
Continued on next page.
Package Dimensions unit : mm (typ)
Package Dimensions unit : mm (typ)
7537-001
7535-001
53012 TKIM/N1805QA MSIM TB-00001078
SANYO Semiconductors
DATA SHEET
2SJ661
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Ordering number : EN8586A
2SJ661-1E
2SJ661-DL-1E
Product & Package Information
• Package : TO-262-3L
• Package : TO-263-2L
• JEITA, JEDEC : TO-262
• JEITA, JEDEC : SC-83, TO-263
• Minimum Packing Quantity : 50pcs./magazine
• Minimum Packing Quantity : 800pcs./reel
Marking
Packing Type : DL
Electrical Connection




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