Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

1N4448WS Datenblatt(PDF) 1 Page - WILLAS ELECTRONIC CORP

Teilenummer 1N4448WS
Bauteilbeschribung  SOD-323 Plastic-Encapsulate Diodes
Download  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  WILLAS [WILLAS ELECTRONIC CORP]
Direct Link  http://www.willas.com.tw
Logo WILLAS - WILLAS ELECTRONIC CORP

1N4448WS Datenblatt(HTML) 1 Page - WILLAS ELECTRONIC CORP

  1N4448WS Datasheet HTML 1Page - WILLAS ELECTRONIC CORP 1N4448WS Datasheet HTML 2Page - WILLAS ELECTRONIC CORP 1N4448WS Datasheet HTML 3Page - WILLAS ELECTRONIC CORP  
Zoom Inzoom in Zoom Outzoom out
 1 / 3 page
background image
SOD-323 Plastic-Encapsulate Diodes
FAST SWITCHING DIODE
FEATURES
Fast Switching Speed
Surface Mount Package Ideally Suited for Automatic Insertion
For General Purpose Switching Applications
High Conductance
MARKING: T5
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25
Parameter
Symbol
Limit
Unit
Non-Repetitive Peak
Reverse Voltage
VRM
100
V
Peak Repetitive Peak
Reverse Voltage
Working Peak
Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75
V
RMS Reverse Voltage
VR(RMS)
53
V
Forward Continuous Current
IFM
500
mA
Average Rectified Output Current
IO
250
mA
Peak
Forward Surge Current @t=1.0μs
@
t =1.0s
IFSM
4.0
1.5
A
Power Dissipation
Pd
200
mW
Thermal Resistance Junction to
Ambient
RθJA
625
℃/W
Storage
Temperature
TSTG
-55~+150
Electrical Ratings @T
a=25
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Reverse
breakdown voltage
V (BR)
75
V
IR=10
μA
VF1
0.62
0.72
V
IF=5mA
VF2
0.855
V
IF=10mA
VF3
1.0
V
IF=100mA
Forward voltage
VF4
1.25
V
IF=150mA
IR1
2.5
μA
VR=75V
Reverse current
IR2
25
nA
VR=20V
Capacitance between terminals
CT
4
pF
VR=0V,f=1MHz
Reverse
recovery time
trr
4
ns
IF=IR=10mA
Irr=0.1XIR,RL=100Ω
SOD-323
2012-1
WILLAS ELECTRONIC CORP.
1N4448WS
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Package outline
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
Terminals :Plated terminals, solderable per MIL-STD-750
,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.011 gram
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
SOD-123H
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY
SOD-123
PACKAGE
WILLAS
BARRIER RECTIFIERS -20V- 200V
FM120-M
THRU
FM1200-M
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
WILLAS ELECTRONIC CORP.
201
2-06
 
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115
120
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
14
21
28
35
42
56
70
105
140
20
30
40
50
60
80
100
150
200
Volts
Volts
Volts
Maximum Average Forward Rectified Current
 
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
 
IFSM
1.0
 
30
Amps
 
Amps
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
 
 
-55 to +125
40
120
 
- 65 to +175
 
 
-55 to +150
℃/W
PF
 
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Volts
@TA=25℃
0.5
Maximum Average Reverse Current at
Rated DC Blocking Voltage
@TA=125℃
IR
10
 
mAmps
 
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Pb-Free package is available
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
Moisture Sensitivity Level 1
Polarity: Color band denotes cathode end


Ähnliche Teilenummer - 1N4448WS

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Pan Jit International I...
1N4448WS PANJIT-1N4448WS Datasheet
127Kb / 3P
   SURFACE MOUNT SWITCHING DIODES
logo
Jiangsu Changjiang Elec...
1N4448WS JIANGSU-1N4448WS Datasheet
701Kb / 4P
   FAST SWITCHING DIODE
logo
TAITRON Components Inco...
1N4448WS TAITRON-1N4448WS Datasheet
226Kb / 5P
   Two Terminals SMD Switching Diodes
logo
Guangdong Juxing Electr...
1N4448WS JUXING-1N4448WS Datasheet
1Mb / 2P
   200mW Surface Mount Switching Didoe
logo
Gaomi Xinghe Electronic...
1N4448WS GXELECTRONICS-1N4448WS Datasheet
544Kb / 2P
   Small Signal Diode
More results

Ähnliche Beschreibung - 1N4448WS

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
WILLAS ELECTRONIC CORP
1N4148WS WILLAS-1N4148WS Datasheet
481Kb / 3P
   SOD-323 Plastic-Encapsulate Diodes
logo
Tiger Electronic Co.,Lt...
BZT52B5V1S TGS-BZT52B5V1S Datasheet
1Mb / 5P
   SOD-323 Plastic-Encapsulate Diodes
logo
Nanjing International G...
B1040WS DGNJDZ-B1040WS Datasheet
1,023Kb / 4P
   SOD-323 Plastic-Encapsulate Diodes
logo
Guangdong Youtai Semico...
CESD3V3D3 UMW-CESD3V3D3 Datasheet
608Kb / 5P
   SOD-323 Plastic-Encapsulate Diodes
logo
Daya Electric Group Co....
BAV16WS DAYA-BAV16WS Datasheet
179Kb / 2P
   SOD-323 Plastic-Encapsulate Diodes
logo
Zhaoxingwei Electronics...
BAT60A ZHAOXINGWEI-BAT60A Datasheet
3Mb / 1P
   SOD-323 Plastic-Encapsulate Diodes
logo
WILLAS ELECTRONIC CORP
1N4148WS WILLAS-1N4148WS Datasheet
520Kb / 3P
   SOD-323 Plastic-Encapsulate Diodes
logo
Nanjing International G...
B5817WS-1A-SOD-323 DGNJDZ-B5817WS-1A-SOD-323 Datasheet
572Kb / 3P
   SOD-323 Plastic-Encapsulate Diodes
1N4148WS DGNJDZ-1N4148WS_V01 Datasheet
1Mb / 5P
   SOD-323 Plastic-Encapsulate Diodes
B5817WS DGNJDZ-B5817WS_V01 Datasheet
1Mb / 4P
   SOD-323 Plastic-Encapsulate Diodes
More results


Html Pages

1 2 3


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com