2SD1898 datasheet(1/3 Pages) WILLAS

Teilenummer	2SD1898

Bauteilbeschribung	SOT-89 Plastic-Encapsulate Transistors

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Hersteller	WILLAS [WILLAS ELECTRONIC CORP]

Direct Link	http://www.willas.com.tw

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SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (NPN)

FEATURES

High Breakdown Voltage and Current

Excellent DC Current Gain Linearity

Low Collector-Emitter Saturation Voltage

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=50µA,IE=0

100

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

80

V

Emitter-base breakdown voltage

V(BR)EBO

IE=50µA,IC=0

5

V

Collector cut-off current

ICBO

VCB=80V,IE=0

1

µA

Emitter cut-off current

IEBO

VEB=4V,IC=0

1

µA

DC current gain

hFE

VCE=3V, IC=500mA

82

390

Collector-emitter saturation voltage

VCE(sat)

IC=500mA,IB=20mA

0.4

V

Transition frequency

fT

VCE=10V,IC=50mA, f=100MHz

100

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

20

pF

CLASSIFICATION OF hFE

RANK

P

Q

R

RANGE

82–180

120–270

180–390

MARKING

DF

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

1

A

PC

Collector Power Dissipation

500

mW

RθJA

Thermal Resistance From Junction To Ambient

250

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

2SD1898

2012- 0

WILLAS ELECTRONIC CORP.

WILLAS

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

Ähnliche Beschreibung - 2SD1898

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