Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE2301 Datenblatt(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE2301 Datenblatt(HTML) 3 Page - ACE Technology Co., LTD. |
3 / 5 page ACE2301 P-Channel Enhancement Mode MOSFET VER 1.3 3 Gate-Drain Charge Qgd 1.7 Turn-On Delay Time Td(on) VDD=-6V,RL=6Ω ID=-1A, VGEN=-4.5V RG=6Ω 13 25 ns Turn-On Rise Time Tf 36 60 Turn-Off Delay Time td(off) 42 70 Turn-Off Fall Time tf 34 60 Input Capacitance Ciss VDS=-6V, VGS=0V F=1.0MHz 415 pF Output Capacitance Coss 223 Reverse Transfer Capacitance Crss 87 Source-Drain Diode Max. Diode Forward Current IS -1.6 A Diode Forward Voltage VSD IS=-1.6A,VGS=0V -1.2 V Note: Pulse test pulse width<=300us, duty cycle<=2%. |
Ähnliche Teilenummer - ACE2301_12 |
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Ähnliche Beschreibung - ACE2301_12 |
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