Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE2303BM+H Datenblatt(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE2303BM+H Datenblatt(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 7 page ACE2303 P-Channel Enhancement Mode MOSFET VER 1.3 2 Packaging Type SOT-23-3 3 1 2 Ordering information ACE2303 XX + H Electrical Characteristics (TA=25℃, Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-10uA -30 V Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -1.0 -3.0 Gate Leakage Current IGSS VDS=0.V, VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V -1 uA VDS=-30V, VGS=0V TJ=55℃ -10 On-State Drain Current ID(ON) VDS≦-5V, VGS=-10V -6 A Drain-Source On-Resistance RDS(ON) VGS=-10V, ID=-2.6A 0.095 0.130 Ω VGS=-4.5V, ID=-2.0A 0.125 0.180 Forward Transconductance gfs VDS=-10V, ID=-1.7A 2.4 S Diode Forward Voltage VSD IS=-1.25A, VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg VDS=-15V, VGS=-10V, ID≡-1.7A 5.8 10 nC Gate-Source Charge Qgs 0.8 Gate-Drain Charge Qgd 1.5 Input Capacitance Ciss VDS=-15V, VGS=0V, f=1MHz 226 pF Output Capacitance Coss 87 SOT-23-3 Description 1 Gate 2 Source 3 Drain BM: SOT-23-3 Halogen - free Pb - free |
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