Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE2305 Datenblatt(PDF) 4 Page - ACE Technology Co., LTD. |
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ACE2305 Datenblatt(HTML) 4 Page - ACE Technology Co., LTD. |
4 / 7 page ACE2305 P-Channel Enhancement Mode MOSFET VER 1.3 4 Typical Characteristics Gate Charge On-Resistance vs. Junction Temperature Oq Total Gate Charge (nC) TJ – Junction Temperature (℃) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD Source to Drain Voltage (V) VGS – Gate to Source Voltage (V) |
Ähnliche Teilenummer - ACE2305_12 |
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Ähnliche Beschreibung - ACE2305_12 |
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