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AD8047AN Datenblatt(PDF) 3 Page - Analog Devices |
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AD8047AN Datenblatt(HTML) 3 Page - Analog Devices |
3 / 16 page AD8047/AD8048 REV. 0 –3– MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated by these de- vices is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsu- lated devices is determined by the glass transition temperature of the plastic, approximately +150 °C. Exceeding this limit tem- porarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceed- ing a junction temperature of +175 °C for an extended period can result in device failure. While the AD8047 and AD8048 are internally short circuit pro- tected, this may not be sufficient to guarantee that the maxi- mum junction temperature (+150 °C) is not exceeded under all conditions. To ensure proper operation, it is necessary to ob- serve the maximum power derating curves. 2.0 0 –50 80 1.5 0.5 –40 1.0 0 10 –10 –20 –30 20 30 40 50 60 70 90 AMBIENT TEMPERATURE – °C T J = +150 °C 8-PIN MINI-DIP PACKAGE 8-PIN SOIC PACKAGE Figure 2. Plot of Maximum Power Dissipation vs. Temperature ORDERING GUIDE Temperature Package Package Model Range Description Option* AD8047AN –40 °C to +85°C Plastic DIP N-8 AD8047AR –40 °C to +85°C SOIC R-8 AD8047-EB Evaluation Board AD8048AN –40 °C to +85°C Plastic DIP N-8 AD8048AR –40 °C to +85°C SOIC R-8 AD8048-EB Evaluation Board *N = Plastic DIP; R= SOIC (Small Outline Integrated Circuit) ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V Voltage Swing × Bandwidth Product (AD8047) . . . 180 V – MHz (AD8048) . . . 250 V– MHz Internal Power Dissipation2 Plastic Package (N) . . . . . . . . . . . . . . . . . . . . . . . . 1.3 Watts Small Outline Package (R) . . . . . . . . . . . . . . . . . . . 0.9 Watts Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V S Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±1.2 V Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves Storage Temperature Range (N, R) . . . . . . . . –65 °C to +125°C Operating Temperature Range (A Grade) . . . – 40 °C to +85°C Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300 °C NOTES 1Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2Specification is for device in free air: 8-Pin Plastic DIP Package: θ JA = 90 °C/Watt 8-Pin SOIC Package: θ JA = 140°C/Watt WARNING! ESD SENSITIVE DEVICE CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although these devices feature proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. METALIZATION PHOTOS Dimensions shown in inches and (mm). Connect Substrate to –VS. AD8047 +VS VOUT –VS –IN +IN 0.045 (1.14) 0.044 (1.13) AD8048 +VS –VS –OUT –IN +IN 0.045 (1.14) 0.044 (1.13) |
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