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AD824AR-14-3V Datenblatt(PDF) 5 Page - Analog Devices |
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AD824AR-14-3V Datenblatt(HTML) 5 Page - Analog Devices |
5 / 16 page AD824 REV. A –5– WAFER TEST LIMITS Parameter Symbol Conditions Limit Units Offset Voltage VOS 1.0 mV max Input Bias Current IB 12 pA max Input Offset Current IOS 20 pA Input Voltage Range VCM –0.2 to 3.0 V min Common-Mode Rejection Ratio CMRR VCM = 0 V to 2 V 66 dB min Power Supply Rejection Ratio PSRR V = + 2.7 V to +12 V 70 µV/V Large Signal Voltage Gain AVO RL = 2 k Ω 15 V/mV min Output Voltage High VOH ISOURCE = 20 µA 4.975 V min Output Voltage Low VOL ISINK = 20 µA 25 mV max Supply Current/Amplifier ISY VO = 0 V, RL = ∞ 600 µA max NOTE Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing. (@ VS = +5.0 V, VCM = 0 V, TA = +25 C unless otherwise noted) WARNING! ESD SENSITIVE DEVICE CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD824 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. ABSOLUTE MAXIMUM RATINGS 1 Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V Input Voltage . . . . . . . . . . . . . . . . . . . . . . . –VS – 0.2 V to +VS Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±30 V Output Short Circuit Duration to GND . . . . . . . . . Indefinite Storage Temperature Range N, R Package . . . . . . . . . . . . . . . . . . . . . . –65 °C to +150°C Operating Temperature Range AD824A, B . . . . . . . . . . . . . . . . . . . . . . . . –40 °C to +85°C Junction Temperature Range N, R Package . . . . . . . . . . . . . . . . . . . . . . –65 °C to +150°C Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300 °C Package Type θ JA 2 θ JC Units 14-Pin Plastic DIP (N) 76 33 °C/W 14-Pin SOIC (R) 120 36 °C/W 16-Pin SOIC (R) 92 27 °C/W NOTES 1Absolute maximum ratings apply to both DICE and packaged parts unless otherwise noted. 2 θ JA is specified for the worst case conditions, i.e., θJA is specified for device in socket for P-DIP packages; θ JA is specified for device soldered in circuit board for SOIC package. ORDERING GUIDE Temperature Model Range Package Option AD824AN –40 °C to +85°C 14-Pin Plastic DIP AD824BN –40 °C to +85°C 14-Pin Plastic DIP AD824AR –40 °C to +85°C 14-Pin SOIC AD824AR-3V –40 °C to +85°C 14-Pin SOIC AD824AN-3V –40 °C to +85°C 14-Pin Plastic DIP AD824AR-14 –40 °C to +85°C 14-Pin SOIC AD824AR-14-3V –40 °C to +85°C 14-Pin SOIC AD824AR-16 –40 °C to +85°C 16-Pin SOIC AD824AChips +25 °C DICE DICE CHARACTERISTICS AD824 Die Size 0.70 X 0.130 inch, 9,100 sq. mils. Substrate (Die Backside) Is Connected to V+. Transistor Count, 143. I6 R1 R2 R9 R7 R17 R14 R12 R13 R15 VCC I5 Q18 Q29 Q27 Q21 Q20 Q23 Q25 Q24 Q31 Q28 Q22 Q19 Q7 Q6 Q5 Q8 Q3 Q2 Q4 I1 I2 I3 I4 +IN J1 –IN C1 Q26 VOUT J2 VEE C3 C2 C4 Figure 1. Simplified Schematic of 1/4 AD824 |
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Ähnliche Beschreibung - AD824AR-14-3V |
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