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IRFB4137PBF Datenblatt(PDF) 1 Page - International Rectifier

Teilenummer IRFB4137PBF
Bauteilbeschribung  High Efficiency Synchronous Rectification in SMPS
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFB4137PBF Datenblatt(HTML) 1 Page - International Rectifier

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IRFB4137PbF
1
www.irf.com
© 2012 International Rectifier
October 30, 2012
HEXFET® Power MOSFET
D
S
G
TO-220Pak
G
D
S
Gate
Drain
Source
Application
 High Efficiency Synchronous Rectification in SMPS
 Uninterruptible Power Supply

High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
 Fully Characterized Capacitance and Avalanche SOA
 Enhanced body diode dV/dt and dI/dt Capability
 Lead-Free, RoHS Compliant
Base part number Package Type
Standard Pack
Orderable Part Number
Form
Quantity
IRFB4137PbF
TO-220Pak
Tube
50
IRFB4137PbF
VDSS
300V
RDS(on) typ.
56m

max
69m

ID
38A
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
38
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
27
IDM
Pulsed Drain Current 
152
PD @TC = 25°C
Maximum Power Dissipation
341
W
Linear Derating Factor
2.3
W/°C
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak Diode Recovery dv/dt
8.9
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175  
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
 
Avalanche Characteristics 
EAS (Thermally limited)
Single Pulse Avalanche Energy 
414 
mJ
Thermal Resistance  
Parameter
Typ.
Max.
Units
RJC
Junction-to-Case 
–––
0.44
°C/W
RCS
Case-to-Sink, Flat Greased Surface
0.50
–––
RJA
Junction-to-Ambient 
–––
62
°C  
S
D
G
 


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