ADG619BRM datasheet(5/8 Pages) AD

Teilenummer	ADG619BRM

Bauteilbeschribung	CMOS -5 V/ 5V 4 OHM SINGLE SPDT SWITCHES

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Hersteller	AD [Analog Devices]

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5 / 8 page

REV. 0

–5–

ADG619/ADG620

TERMINOLOGY

Mnemonic

Description

VDD

Most Positive Power Supply Potential

VSS

Most Negative Power Supply in a Dual Supply Application. In single supply applications, this should be

tied to ground at the device.

GND

Ground (0 V) Reference

IDD

Positive Supply Current

ISS

Negative Supply Current

S

Source Terminal. May be an input or output.

D

Drain Terminal. May be an input or output.

IN

Logic Control Input

RON

Ohmic Resistance Between D and S

DRON

On Resistance Match Between Any Two Channels, i.e., RON Max – RON Min.

RFLAT(ON)

Flatness is Defined as the Difference Between the Maximum and Minimum Value of On Resistance as

Measured Over the Specified Analog Signal Range.

IS (OFF)

Source Leakage Current With the Switch “OFF”

ID, IS (ON)

Channel Leakage Current With the Switch “ON”

VD (VS)

Analog Voltage on Terminals D, S

VINL

Maximum Input Voltage for Logic “0”

VINH

Minimum Input Voltage for Logic “1”

IINL(IINH)

Input Current of the Digital Input

CS (OFF)

“OFF” Switch Source Capacitance

CD, CS (ON)

“ON” Switch Capacitance

tON

Delay Between Applying the Digital Control Input and the Output Switching On

tOFF

Delay Between Applying the Digital Control Input and the Output Switching Off

tMBB

“ON” Time, Measured Between the 80% Points of Both Switches, When Switching From One Address

State to Another

tBBM

“OFF” Time or “ON” Time Measured Between the 90% Points of Both Switches, When Switching from

One Address State to Another

Charge Injection

A Measure of the Glitch Impulse Transfered From the Digital Input to the Analog Output During Switching

Crosstalk

A Measure of Unwanted Signal that is Coupled Through From One Channel to Another as a Result of

Parasitic Capacitance

Off Isolation

A Measure of Unwanted Signal Coupling Through an “OFF” Switch

Bandwidth

The Frequency Response of the “ON” Switch

Insertion Loss

The Loss Due to the ON Resistance of the Switch

VD, VS – V

–3

5

13

8

0

3

2

5

–5

–1

7

1

6

4

–2

2

4

–4

0

TA = 25 C

VDD, VSS = 2.5V

VDD, VSS = 3V

VDD, VSS = 3.3V

VDD, VSS = 4.5V

VDD, VSS = 5V

TPC 1. On Resistance vs. VD (VS) –

Dual Supply

Typical Performance Characteristics

VD, VS – V

15

34

18

0

4

14

10

0

2

16

6

2

12

8

TA = 25 C

VSS = 0V

VDD = 2.7V

VDD = 3V

VDD = 3.3V

VDD = 4.5V

VDD = 5V

TPC 2. On Resistance vs. VD (VS) –

Single Supply

VD, VS – V

–35

13

6

0

1

5

–5

–1

2

4

3

–22

4

–4

0

TA = +85 C

TA = +25 C

TA = –40 C

VDD = +5V

VSS = –5V

TPC 3. On Resistance vs. VD (VS) for

Different Temperatures – Dual Supply

Ähnliche Beschreibung - ADG619BRM

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Analog Devices	ADG621	141Kb / 12P	CMOS -5 V/ 5V 4 OHM DUAL SPST SWITCHES REV. 0
	ADG619	365Kb / 16P	CMOS, 짹5 V/5 V, 4 廓, Single SPDT Switches REV. C
	ADG621BRMZ	378Kb / 12P	CMOS 5,-5 V/5 V, 4 ohm Dual SPST Switches REV. B
	ADG601	132Kb / 8P	2 ohm CMOS -5 V/5 V, SPST SWITCHES REV. 0
	ADG1433	434Kb / 20P	4 OHM RON, Triple/Quad SPDT -15 V/12 V/-5 V iCMOS Switches REV. 0
	ADG622BRMZ	378Kb / 12P	CMOS 5 V/5 V, 4 Dual SPST Switches REV. B
	ADG819	195Kb / 12P	0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches REV. 0
	ADG733	177Kb / 11P	CMOS, 2.5 ohm Low Voltage, Triple/Quad SPDT Switches REV. 0
	ADG620	365Kb / 16P	Single SPDT Switches REV. C
	ADG619	365Kb / 16P	Single SPDT Switches REV. C

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