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ADM3311 Datenblatt(PDF) 10 Page - Analog Devices |
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ADM3311 Datenblatt(HTML) 10 Page - Analog Devices |
10 / 12 page ADM3311E –10– REV. A FAST TRANSIENT BURST TESTING (IEC1000-4-4) IEC1000-4-4 (previously 801-4) covers electrical fast-transient/ burst (EFT) immunity. Electrical fast transients occur as a result of arcing contacts in switches and relays. The tests simu- late the interference generated when, for example, a power relay disconnects an inductive load. A spark is generated due to the well known back EMF effect. In fact, the spark consists of a burst of sparks as the relay contacts separate. The voltage appear- ing on the line, therefore, consists of a burst of extremely fast transient impulses. A similar effect occurs when switching on fluorescent lights. The fast transient burst test defined in IEC1000-4-4 simulates this arcing and its waveform is illustrated in Figure 25. It con- sists of a burst of 2.5 kHz to 5 kHz transients repeating at 300 ms intervals. It is specified for both power and data lines. 300ms 0.2/0.4ms t V 50ns t V 5ns 15ms Figure 25. IEC1000-4-4 Fast Transient Waveform Table IV. V Peak (kV) V Peak (kV) Level PSU I-O 1 0.5 0.25 2 1 0.5 32 1 44 2 A simplified circuit diagram of the actual EFT generator is illustrated in Figure 26. The transients are coupled onto the signal lines using an EFT coupling clamp. The clamp is 1 m long and it completely sur- rounds the cable, providing maximum coupling capacitance (50 pF to 200 pF typ) between the clamp and the cable. High energy transients are capacitively coupled onto the signal lines. Fast rise times (5 ns) as specified by the standard result in very effective coupling. This test is very severe since high voltages are coupled onto the signal lines. The repetitive transients can often cause problems where single pulses don’t. Destructive latch-up may be induced due to the high energy content of the transients. Note that this stress is applied while the interface products are powered up and transmitting data. The EFT test applies hun- dreds of pulses with higher energy than ESD. Worst case tran- sient current on an I-O line can be as high as 40 A. Test results are classified according to the following: 1. Normal performance within specification limits. 2. Temporary degradation or loss of performance, which is self- recoverable. 3. Temporary degradation or loss of function or performance, which requires operator intervention or system reset. 4. Degradation or loss of function that is not recoverable due to damage. The ADM3311E has been tested under worst case conditions using unshielded cables and meet Classification 2. Data trans- mission during the transient condition is corrupted but it may be resumed immediately following the EFT event without user intervention. HIGH VOLTAGE SOURCE RC CC L 50 OUTPUT ZS RM CD Figure 26. IEC1000-4-4 Fast Transient Generator IEC1000-4-3 RADIATED IMMUNITY IEC1000-4-3 (previously IEC801-3) describes the measurement method and defines the levels of immunity to radiated electro- magnetic fields. It was originally intended to simulate the elec- tromagnetic fields generated by portable radio transceivers or any other device that generates continuous wave radiated electromagnetic energy. Its scope has since been broadened to include spurious EM energy which can be radiated from fluores- cent lights, thyristor drives, inductive loads, etc. Testing for immunity involves irradiating the device with an EM field. There are various methods of achieving this including use of anechoic chamber, stripline cell, TEM cell, GTEM cell. A stripline cell consists of two parallel plates with an electric field developed between them. The device under test is placed within the cell and exposed to the electric field. There are three severity levels having field strengths ranging from 1 V to 10 V/m. Results are classified in a similar fashion to those for IEC1000-4-4. 1. Normal operation. 2. Temporary degradation or loss of function, which is self- recoverable when the interfering signal is removed. 3. Temporary degradation or loss of function that requires operator intervention or system reset when the interfering signal is removed. 4. Degradation or loss of function that is not recoverable due to damage. The ADM3311E easily meets Classification 1 at the most strin- gent (Level 3) requirement. In fact, field strengths up to 30 V/m showed no performance degradation and error-free data trans- mission continued even during irradiation. |
Ähnliche Teilenummer - ADM3311 |
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Ähnliche Beschreibung - ADM3311 |
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