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1N5817 Datenblatt(PDF) 1 Page - Fairchild Semiconductor

Teilenummer 1N5817
Bauteilbeschribung  1.0 Ampere Schottky Barrier Rectifiers
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

1N5817 Datenblatt(HTML) 1 Page - Fairchild Semiconductor

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1N5817 - 1N5819
1.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
T
A
= 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Discrete POWER & Signal
Technologies
©1998 Fairchild Semiconductor Corporation
Features
1.0 ampere operation at T
A
= 90°C
with no thermal runaway.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
Parameter
Device
Units
1N5817
1N5818
1N5819
Peak Repetitive Reverse Voltage
20
30
40
V
Maximum RMS Voltage
14
21
28
V
DC Reverse Voltage
(Rated VR)
20
30
40
V
Maximum Reverse Current
TA = 25
°C
@ rated VR
TA = 100
°C
0.5
10
mA
mA
Maximum Forward Voltage
@ 1.0 A
@ 3.0 A
450
750
550
875
600
900
mV
mV
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
110
pF
DO-41
COLOR BAND DENOTES CATHODE
Symbol
Parameter
Value
Units
IO
Average Rectified Current
.375 " lead length @ TA = 90
°C
1.0
A
if(surge)
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
25
A
PD
Total Device Dissipation
Derate above 25
°C
1.25
12.5
W
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
80
°C/W
Tstg
Storage Temperature Range
-65 to +125
°C
TJ
Operating Junction Temperature
-65 to +125
°C
1.0 min
(25.4)
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
0.205 (5.21)
0.160 (4.06)
Dimensions in
inches (mm)


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