Datenblatt-Suchmaschine für elektronische Bauteile |
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1N5817 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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1N5817 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 2 page 1N5817 - 1N5819 1.0 Ampere Schottky Barrier Rectifiers Absolute Maximum Ratings* T A = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics T A = 25°C unless otherwise noted Discrete POWER & Signal Technologies ©1998 Fairchild Semiconductor Corporation Features • 1.0 ampere operation at T A = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. Parameter Device Units 1N5817 1N5818 1N5819 Peak Repetitive Reverse Voltage 20 30 40 V Maximum RMS Voltage 14 21 28 V DC Reverse Voltage (Rated VR) 20 30 40 V Maximum Reverse Current TA = 25 °C @ rated VR TA = 100 °C 0.5 10 mA mA Maximum Forward Voltage @ 1.0 A @ 3.0 A 450 750 550 875 600 900 mV mV Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz 110 pF DO-41 COLOR BAND DENOTES CATHODE Symbol Parameter Value Units IO Average Rectified Current .375 " lead length @ TA = 90 °C 1.0 A if(surge) Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 25 A PD Total Device Dissipation Derate above 25 °C 1.25 12.5 W mW/ °C RθJA Thermal Resistance, Junction to Ambient 80 °C/W Tstg Storage Temperature Range -65 to +125 °C TJ Operating Junction Temperature -65 to +125 °C 1.0 min (25.4) 0.107 (2.72) 0.080 (2.03) 0.034 (0.86) 0.028 (0.71) 0.205 (5.21) 0.160 (4.06) Dimensions in inches (mm) |
Ähnliche Teilenummer - 1N5817 |
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Ähnliche Beschreibung - 1N5817 |
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