STP19NM50N datasheet(3/15 Pages) STMICROELECTRONICS

Teilenummer	STP19NM50N

Bauteilbeschribung	N-channel 500 V, 0.2 ohm, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247

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STF19NM50N, STP19NM50N, STW19NM50N

Electrical ratings

Doc ID 17079 Rev 1

3/15

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-247

TO-220FP

VDS

Drain-source voltage (VGS = 0)

500

V

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

14

14 (1)

1.

Limited only by maximum temperature allowed

A

ID

Drain current (continuous) at TC = 100 °C

9

9 (1)

A

IDM

(2)

2.

Pulse width limited by safe operating area

Drain current (pulsed)

56

56 (1)

A

PTOT

Total dissipation at TC = 25 °C

110

30

W

dv/dt (3)

3.

ISD ≤ 14 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS

Peak diode recovery voltage slope

15

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

V

Tstg

Storage temperature

- 55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

TO-247

TO-220FP

Rthj-case Thermal resistance junction-case max

1.14

4.17

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

50

62.5

°C/W

Tl

Maximum lead temperature for soldering

purpose

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

7A

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50 V)

208

mJ

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