Datenblatt-Suchmaschine für elektronische Bauteile |
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TS9001 Datenblatt(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TS9001 Datenblatt(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 6 page TS9001 Series 300mA CMOS LDO with Enable 2/6 Version: C12 Absolute Maximum Rating Parameter Symbol Limit Unit Input Supply Voltage Vin +7 V Enable Input Voltage Vce Gnd-0.3 ~ Vin+0.3 V Output Current Io Pd / (Vin – Vout) Power Dissipation PD 380 mW Thermal Resistance Өja 260 oC/W Operating Junction Temperature Range Tj -40 ~ +150 oC Storage Temperature Range TSTG -65 ~ +150 oC Lead Soldering Temperature (260 oC) 5 S Notes: Stress above the listed absolute rating may cause permanent damage to the device. Electrical Characteristics (Ta = 25 oC, Io=1mA, Cout=2.2uF, Vce≥2V, unless otherwise noted) Parameter Conditions Min Typ Max Unit Output Voltage Vin=Vo + 1V 0.985|Vo| 1.015|Vo| V Output Voltage Temperature Coefficient -- 50 -- ppm/ oC Maximum Output Current Vin=Vo+1V, 300 -- -- mA Line Regulation Vo+1V ≤ Vin ≤ 7V -- -- 0.3 %/V Load Regulation Vin=Vo+1V, 1mA ≤I L ≤300mA Vout≥2.5V -- 0.2 1.0 %/V Vin=Vo+1V, 1mA ≤I L ≤200mA Vout<2.5V -- 0.2 1.0 Dropout Voltage Io=300mA, Vout=Vo - 2% Vout≥2.5V -- 300 -- mV Io=200mA, Vout=Vo - 2% Vout<2.5V -- 800 1000 Quiescent Current Vin ≤0.4V (shutdown) -- 2 3 uA Ground Pin Current Io=1mA to 300mA -- 30 50 uA Output Current Limit Vout=0V -- 450 -- mA Power Supply Rejection Ratio At f=1kHz, Io=100mA, -- 60 -- dB Power Supply Rejection Ratio At f=1kHz, Io=100mA, Cbypass=0.01uF -- 75 -- dB Output Noise Io=10mA, f=10Hz to 100kHz, 10pF from bypass to Ground -- 30 -- uVrms Enable Input Enable Input Logic-Low Voltage Regulation shutdown -- -- 0.4 V Enable Input Logic-High Voltage Regulation enable 2.0 -- -- V Enable Input Current VIL ≤0.4V -- 0.01 1 uA VIL≥2.0V -- 1 5 |
Ähnliche Teilenummer - TS9001_13 |
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Ähnliche Beschreibung - TS9001_13 |
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