2SD2675TL datasheet(1/3 Pages) LITTELFUSE

Teilenummer	2SD2675TL

Bauteilbeschribung	General purpose amplification (30V, 1A)

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2SD2675

Transistors

Rev.B

1/2

General purpose amplification (30V, 1A)

2SD2675

Application

Low frequency amplifier

Features

1) A collector current is large.

2) Collector saturation voltage is low.

VCE(sat) : max.350mV

At IC = 500mA / IB = 25mA

External dimensions (Unit : mm)

Each lead has same dimensions

(1) Base

(2) Emitter

(3) Collector

TSMT3

0~0.1

0.16

0.85

1.0MAX

0.7

(2)

(1)

(3)

2.9

1.9

0.95

0.4

Absolute maximum ratings (Ta=25

°C)

Parameter

Symbol

Unit

∗1

VCBO

V

Collector-base voltage

VCEO

V

Collector-emitter voltage

VEBO

V

Emitter-base voltage

IC

A

ICP

A

Collector current

PC

mW

Power dissipation

Tj

°C

Junction temperature

Tstg

Limits

30

6

1

2

500

W

1

150

−55 to +150

°C

Range of storage temperature

Single pulse, PW

=1ms

∗2

Mounted on a 25

×25× 0.8mm Ceramic substrate

∗1

∗2

t

Packaging specifications

2SD2675

TL

3000

Type

Package

Code

Basic ordering unit (pieces)

Taping

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

Typ. Max.

Unit

Conditions

30

−−

V

IC

=10µA

Collector-base breakdown voltage

BVCBO

30

−−

V

IC

=1mA

Collector-emitter breakdown voltage

BVCEO

6

−−

V

IE

=10µA

Emitter-base breakdown voltage

BVEBO

−−

100

nA

VCB

=30V

Collector cutoff current

ICBO

Emitter cutoff current

−−

100

nA

VEB

=6V

IEBO

−

120

350

mV

IC/IB

=500mA/25mA

Collector-emitter saturation voltage

VCE(sat)

270

−

680

−

VCE/IC

=2V/100mA

DC current gain

hFE

−

320

−

MHz VCE

=2V, IE=−100mA, f=100MHz

Transition frequency

fT

−

7

−

pF

VCB

=10V, IE=0A, f=1MHz

Corrector output capacitance

Cob

∗

∗ Pulsed

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