Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE1532B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1532B Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 5 page ACE1532B N-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Features Low On-Resistance Fast Switching Speed Low-voltage drive Easily designed drive circuits We declare that the material of product is ROHS compliant. ESD Protected:2000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous) (TA=25℃) ID 250 mA Drain Current (Pulse) IDM*1 1.6 A Power Dissipation (TA=25℃) PD*2 225 mW Operating Temperature / Storage Temperature TJ/TSTG -55/150 OC *1 Pw ≦ 10 μs, Duty cycle ≦1 % *2 When mounted on a 1*0.75*0.062 inch glass epoxy board% Packaging Type SOT-23-3 D G S Ordering information ACE1532B XX + H BM : SOT-23-3 Pb - free Halogen - free |
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