Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE1543B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1543B Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 5 page ACE1543B P-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features V DS (V) =-30V I D=-4.5A R DS(ON) =68m Ω @ V GS=-10V R DS(ON) =83m Ω @ V GS=-4.5V High density cell design for low R DS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current * AC TA=25℃ ID -4.5 A TA=70℃ -3.6 Pulsed Drain Current * B IDM -20 A Power Dissipation TA=25℃ PD 2 W Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC Packaging Type SOT-223 |
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