Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE1550B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1550B Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 7 page ACE1550B P-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Description The ACE1550B combines advanced trench MOSFET technology with a low resistance package to provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones, Pagers. Features V DS (V) =-20V I D=-0.7A R DS(ON) <620m Ω (V GS=-4.5V) R DS(ON) <860m Ω (V GS=-2.5V) R DS(ON) <1450m Ω (V GS=-1.8V) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current * AC TA=25℃ ID -0.7 A TA=70℃ -0.56 Pulsed Drain Current * B IDM -1 A Power Dissipation TA=25℃ PD 0.27 W TA=70℃ 0.16 Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC Packaging Type SOT-523 |
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