Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE1551B Datenblatt(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE1551B Datenblatt(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 7 page ACE1551B N-Channel Enhancement Mode Field Effect Transistor VER 1.2 2 Ordering information ACE1551B XX + H Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250 uA 20 V Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA 0.4 1.0 Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=0.8A 300 360 m Ω VGS=2.5V, ID=0.7A 340 420 VGS=1.8V, ID=0.6A 420 560 Forward Transconductance gfs VDS=10V,ID=0.4A 1 S Diode Forward Voltage VSD ISD=0.15A, VGS=0V 0.65 1.2 V Switching Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=0.6A 1.06 1.38 nC Gate-Source Charge Qgs 0.18 Gate-Drain Charge Qgd 0.32 Turn-On Time td(on) VGS=4.5V, ID=0.5A, VDS=10V, RG=1Ω 18 26 nS tr 20 28 Turn-Off Time td(off) 70 110 tf 25 40 Dynamic Input Capacitance Ciss VGS=0V, VDS=10V, f=1MHz 70 pF Output Capacitance Coss 20 REVERSE Transfer Capacitance Crss 8 JM : SOT-723 Pb - free Halogen - free |
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