Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE1557B Datenblatt(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE1557B Datenblatt(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 5 page ACE1557B N-Channel Enhancement Mode Field Effect Transistor VER 1.2 2 Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250 uA 30 34 V Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA 1 1.4 2 Gate Leakage Current IGSS VDS=0V,VGS=±20V 100 nA Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V 1 uA Drain-Source On-Resistance RDS(ON) VGS=10V, ID=4A 29 32 m Ω VGS=4.5V, ID=3A 41 51 Forward Transconductance gfs VDS=5V,ID=5A 15 S Diode Forward Voltage VSD ISD=1A, VGS=0V 0.77 1.0 V Maximum Body-Diode Continuous Current IS 4.3 A Switching Total Gate Charge Qg VDS=15V, VGS=10V, ID=5A 7.6 9.9 nC Gate-Source Charge Qgs 1.3 1.7 Gate-Drain Charge Qgd 1.7 2.2 Turn-On Delay Time td(on) VGS=10V, RG=6Ω, VDS=15V, RL=15Ω, ID=1A 10.1 20.3 nS Turn-On Rise Time Tr 3.2 6.3 Turn-Off Delay Time td(off) 22.2 44.4 Turn-Off Fall Time Tf 3 6 Dynamic Input Capacitance Ciss VGS=0V, VDS=15V, f=1MHz 391 pF Output Capacitance Coss 86.2 REVERSE Transfer Capacitance Crss 59.4 Gate resistance Rg VGS=0V, VDS=0V, f=1MHz 1.4 2 Ω |
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