Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE1557B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1557B Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 5 page ACE1557B N-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Description The ACE1557B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or in PWM applications. Features 30V/5A =-30V R DS(ON) =29m Ω @ V GS=10V R DS(ON) =41m Ω @ V GS=4.5V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current * AC TA=25℃ ID 5 A TA=70℃ 4.1 Pulsed Drain Current * B IDM 20 A Power Dissipation TA=25℃ PD 2 W TA=70℃ 1.6 Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC Packaging Type SOT-223 Ordering information ACE1557B XX + H XM : SOT-223 Pb - free Halogen - free |
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