Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE1613B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1613B Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE1613B N-Channel Enhancement Mode MOSFET VER 1.2 1 Description ACE1613B uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features V DS =25V, ID=60A, VGS 20V R DS(ON) @VGS=10V, IDS=40A, Typ 4.8mΩ R DS(ON) @VGS=4.5V, IDS=20A, Typ 6.0mΩ Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 25 V Gate-Source Voltage VGSS ±20 V Mounted on PCB of Minimum Footprint Pulsed Drain Current (Note 2) IDM 150 A Continuous Drain Current (Note 1) ID 17 A Total Power Dissipation (Note 1) PD 1.5 W Mounted on PCB of 1in 2 Pad Area Pulsed Drain Current (Note 2) IDM 150 A Continuous Drain Current (Note 1) ID 22 A Total Power Dissipation (Note 1) PD 2.5 W Mounted on Large Heat Sink Pulsed Drain Current (Note 2) IDM 150 A Continuous Drain Current (Note 1) ID 60 (Note 3) A Total Power Dissipation (Note 1) PD 50 W Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC Packaging Type TO-252 |
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