Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE1621B Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1621B Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE1621B P-Channel Enhancement Mode Field Effect Transistor VER 1.2 1 Description ACE1621B uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features V DS (V) =-30V I D=-60A R DS(ON) @VGS=-20V, IDS=-20A, Typ 7.5mΩ R DS(ON) @VGS=-10V, IDS=-20A, Typ 8.5mΩ Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current * AC TA=25℃ ID -60 A TA=70℃ -45 Pulsed Drain Current * B IDM -130 A Power Dissipation TA=25℃ PD 100 W TA=70℃ 50 Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC Packaging Type TO-252 |
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