Datenblatt-Suchmaschine für elektronische Bauteile |
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BCW65C Datenblatt(PDF) 3 Page - Fairchild Semiconductor |
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BCW65C Datenblatt(HTML) 3 Page - Fairchild Semiconductor |
3 / 4 page NPN General Purpose Amplifier (continued) Typical Characteristics Base-Emitter ON Voltage vs Collector Current 0.1 1 10 25 0.2 0.4 0.6 0.8 1 I - COLLECTOR CURRENT (mA) C V = 5V CE 25 °C 125 °C - 40 °C Base-Emitter Saturation Voltage vs Collector Current 1 10 100 500 0.4 0.6 0.8 1 I - COLLECTOR CURRENT (mA) C β = 10 25 °C 125 °C - 40 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 100 125 150 0.1 1 10 100 500 T - AMBIENT TEMPERATURE ( C) A V = 40V CB ° Emitter Transition and Output Capacitance vs Reverse Bias Voltage 0.1 1 10 100 4 8 12 16 20 REVERSE BIAS VOLTAGE (V) f = 1 MHz C ob C te Power Dissipation vs Ambient Temperature 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 TEMPERATURE ( C) o SOT-23 |
Ähnliche Teilenummer - BCW65C |
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Ähnliche Beschreibung - BCW65C |
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