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AM2342NE Datenblatt(Datasheet) 1 Page - Analog Power

Teile-Nr. AM2342NE
Beschreibung  N-Channel 40-V (D-S) MOSFET
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Hersteller  ANALOGPOWER [Analog Power]
Homepage  http://www.analogpowerinc.com/index.html
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AM2342NE
Analog Power
PRELIMINARY
Publication Order Number:
DS-AM2342NE_A
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
VDS (V)
rDS(on) m(Ω)ID (A)
86 @VGS=10V
5.2
128 @VGS=4.5V
3.7
PRODUCT SUMMARY
40
N-Channel 40-V (D-S) MOSFET
•Low r
DS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOT-23 saves board space
Fast switching speed
High performance trench technology
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Symbol
Limit
Units
VDS
40
VGS
±20
TA=25
oC5.2
TA=70
oC4.1
IDM
30
IS
1.6
A
TA=25
oC1.3
TA=70
oC0.8
TJ, Tstg -55 to 150
oC
Power Dissipation
a
PD
Operating Junction and Storage Temperature Range
W
Continuous Source Current (Diode Conduction)
a
ABSOLUTE MAXIMUM RATINGS (TA = 25
oC UNLESS OTHERWISE NOTED)
Parameter
Pulsed Drain Current
b
V
Gate-Source Voltage
Drain-Source Voltage
Continuous Drain Current
a
ID
A
Symbol
Maximum
Units
t <= 5 sec
100
oC/W
Steady-State
166
oC/W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
RθJA
ESD Protected
2000V
SOT-23
Top View
D
S
G
D
G
N-Channel
MOSFET
S




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