Datenblatt-Suchmaschine für elektronische Bauteile |
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STP24N60M2 Datenblatt(PDF) 7 Page - STMicroelectronics |
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STP24N60M2 Datenblatt(HTML) 7 Page - STMicroelectronics |
7 / 22 page DocID023964 Rev 4 7/22 STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance Figure 10. Capacitance variations Figure 11. Output capacitance stored energy Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on-resistance vs temperature VGS 6 4 2 0 0 5 Qg(nC) (V) 20 8 10 15 10 VDD=480 V ID=18 A 25 300 200 100 0 400 500 VDS (V) VDS 12 30 600 AM15471v1 RDS(on) 0.172 0.168 0.164 0.160 0 8 ID(A) ( Ω) 4 12 0.176 VGS=10V 16 AM15465v1 C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 100 Ciss Coss Crss AM15467v1 Eoss 2 1 0 0 100 VDS(V) (µJ) 400 3 200 300 4 5 500 600 6 7 8 AM15472v1 VGS(th) 0.9 0.8 0.7 0.6 -50 0 TJ(°C) (norm) -25 1.0 75 25 50 100 ID = 250 µA 1.1 AM15473v1 RDS(on) 1.7 1.3 0.9 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 ID = 9 A 2.3 VGS = 10 V AM15464v1 |
Ähnliche Teilenummer - STP24N60M2 |
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Ähnliche Beschreibung - STP24N60M2 |
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