Datenblatt-Suchmaschine für elektronische Bauteile |
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AM4512CE Datenblatt(PDF) 1 Page - Analog Power |
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AM4512CE Datenblatt(HTML) 1 Page - Analog Power |
1 / 8 page 1 AM4512CE Analog Power PRELIMINARY Publication Order Number: DS-AM4512CE_A These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. VDS (V) rDS(on) m(Ω)ID (A) 40 @ VGS = 4.5V 6.0 31 @ VGS = 10V 6.9 80 @ VGS = -4.5V -4.2 52 @ VGS = -10V -5.2 30 PRODUCT SUMMARY -30 P & N-Channel 30-V (D-S) MOSFET •Low r DS(on) provides higher efficiency and extends battery life • Low thermal impedance copper leadframe SOIC-8 saves board space • Fast switching speed • High performance trench technology Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Symbol N-Channel P-Channel Units VDS 30 -30 VGS ±20 ±20 TA=25 oC 6.9 -5.2 TA=70 oC5.4 -6.8 IDM 20 -20 IS 1.3 -1.3 A TA=25 oC 2.1 2.1 TA=70 oC1.3 1.3 TJ, Tstg oC Power Dissipation a PD Operating Junction and Storage Temperature Range W -55 to 150 Continuous Source Current (Diode Conduction) a ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED) Parameter Pulsed Drain Current b V Gate-Source Voltage Drain-Source Voltage Continuous Drain Current a ID A Symbol Maximum Units Maximum Junction-to-Case a t <= 5 sec RθJC 40 oC/W Maximum Junction-to-Ambient a t <= 5 sec RθJA 60 oC/W THERMAL RESISTANCE RATINGS Parameter ESD Protected 2000V D 2 P-Channel MOSFET D 1 G 1 N-Channel MOSFET S 1 G 1 S 2 G 2 1 2 3 4 SOIC-8 Top View D 1 D 1 D 2 D 2 8 7 6 5 S 1 G 2 S 2 |
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