Datenblatt-Suchmaschine für elektronische Bauteile |
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FDC6306P Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FDC6306P Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page FDC6306P Rev. C FDC6306P Dual P-Channel 2.5V Specified PowerTrench ™ MOSFET February 1999 ©1999 Fairchild Semiconductor Corporation Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8V ID Drain Current - Continuous (Note 1a) -1.9 A - Pulsed -5 PD Power Dissipation for Single Operation (Note 1a) 0.96 W (Note 1b) 0.9 (Note 1c) 0.7 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 130 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity .306 FDC6306P 7’’ 8mm 3000 units 5 6 4 2 3 1 General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Applications • Load switch • Battery protection • Power management Features • -1.9 A, -20 V. R DS(on) = 0.170 Ω @ V GS = -4.5 V R DS(on) = 0.250 Ω @ V GS = -2.5 V • Low gate charge (3 nC typical). • Fast switching speed. • High performance trench technology for extremely low R DS(ON). • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). D1 S2 G1 D2 S1 G2 SuperSOT -6 TM |
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