Datenblatt-Suchmaschine für elektronische Bauteile |
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FDC6312P Datenblatt(PDF) 3 Page - Fairchild Semiconductor |
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FDC6312P Datenblatt(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDC6312P Rev C (W) Typical Characteristics 0 1 2 3 4 5 6 0 0.5 11.5 22.5 -VDS, DRAIN-SOURCE VOLTAGE (V) -3.0V -2.5V -2.0V -1.5V VGS = -4.5V -3.5V -1.8V 0.75 1 1.25 1.5 1.75 2 2.25 2.5 01 234 56 -ID, DRAIN CURRENT (A) V GS = -1.8V -3.5V -3.0V -2.0V -4.5V -2.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = -2.3A VGS =-4.5V 0.05 0.1 0.15 0.2 0.25 0.3 0.35 12 34 5 -VGS, GATE TO SOURCE VOLTAGE (V) I D = -0.8 A T A = 125 oC TA = 25 oC Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 1 2 3 4 5 6 0.51 1.522.5 3 -VGS, GATE TO SOURCE VOLTAGE (V) T A = -55 oC 125 oC VDS = 5V 25 oC 0.0001 0.001 0.01 0.1 1 10 00.2 0.4 0.6 0.811.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) T A = 125 oC 25 oC -55 oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Ähnliche Teilenummer - FDC6312P |
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Ähnliche Beschreibung - FDC6312P |
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