Datenblatt-Suchmaschine für elektronische Bauteile |
|
FDC638P Datenblatt(PDF) 4 Page - Fairchild Semiconductor |
|
FDC638P Datenblatt(HTML) 4 Page - Fairchild Semiconductor |
4 / 9 page FDC638P Rev.B Figure 10. Single Pulse Maximum Power Dissipation. 0.1 0.3 1 3 10 20 50 100 200 400 1000 2500 -V , DRAIN TO SOURCE VOLTAGE (V) DS Ciss f = 1 MHz V = 0 V GS Coss Crss Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. Figure 9. Maximum Safe Operating Area. Typical Electrical Characteristics 0 3 6 9 12 15 0 1 2 3 4 5 Q , GATE CHARGE (nC) g V = -5V DS -10V I = -4.5A D -15V 0.1 0.2 0.5 1 2 5 10 30 0.01 0.05 0.3 1 5 30 - V , DRAIN-SOURCE VOLTAGE (V) RDS(ON) LIMIT A DC DS 1s 100ms 10ms 1ms V = -4.5V SINGLE PULSE R =156 °C/W T = 25°C θJA GS A 100us 0.01 0.1 1 10 100 300 0 1 2 3 4 5 SINGLE PULSE TIME (SEC) SINGLE PULSE R =156°C/W T = 25°C θJA A 0.00001 0.0001 0.001 0.01 0.1 1 10 100 300 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t / t 1 2 R (t) = r(t) * R R = 156°C/W T - T = P * R (t) A J P(pk) t1 t 2 θJA θJA θJA θJA Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. |
Ähnliche Teilenummer - FDC638P |
|
Ähnliche Beschreibung - FDC638P |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |