Datenblatt-Suchmaschine für elektronische Bauteile |
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2N3906BU Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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2N3906BU Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page © 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3906 / MMBT3906 / PZT3906 Rev. B0 1 October 2011 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier and switching applications at collector currents of 10 μA to 100 mA. Absolute Maximum Ratings* T a = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T a = 25°C unless otherwise noted * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06". ** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. Symbol Parameter Value Units VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Parameter Max. Units 2N3906 *MMBT3906 **PZT3906 PD Total Device Dissipation Derate above 25 °C 625 5.0 350 2.8 1,000 8.0 mW mW/ °C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W 2N3906 MMBT3906 PZT3906 EB C TO-92 SOT-23 SOT-223 Mark:2A C B E E B C C |
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