Datenblatt-Suchmaschine für elektronische Bauteile |
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FDD5670 Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FDD5670 Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page FDD5670 Rev. A FDD5670 60V N-Channel PowerTrenchTM MOSFET Features • 48 A, 60 V. R DS(ON) = 0.015 Ω @ VGS = 10 V R DS(ON) = 0.018 Ω @ VGS = 6 V. • Low gate charge. • Fast switching speed. • High performance trench technology for extremely low R DS(ON ) . ©1999 Fairchild Semiconductor Corporation March 1999 ADVANCE INFORMATION G S D TO-252 S D G Absolute Maximum Ratings TC=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current -Continuous (Note 1) 48 (Note 1a) 10 Maximum Drain Current -Pulsed 100 A Maximum Power Dissipation @ TC = 25 oC (Note 1) 70 TA = 25 oC (Note 1a) 2.8 PD TA = 25 oC (Note 1b) 1.3 W TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to- Case (Note 1) 1.8 °C/W RθJA Thermal Resistance, Junction-to- Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD5670 FDD5670 13’’ 16mm 2500 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. |
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Ähnliche Beschreibung - FDD5670 |
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