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FDD6670A Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FDD6670A Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page FDD6670A, Rev. C FDD6670A N-Channel, Logic Level, PowerTrench MOSFET General Description This N-Channel Logic level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications • DC/DC converter • Motor drives February 2000 Features • 66 A, 30 V. R DS(on) = 0.008 Ω @ V GS = 10 V R DS(on) = 0.010 Ω @ V GS = 4.5 V. • Low gate charge (35nC typical). • Fast switching speed. • High performance trench technology for extremely low R DS(on) . 2000 Fairchild Semiconductor Corporation G S D TO-252 S D G Absolute Maximum Ratings TC=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current -Continuous (Note 1) 66 TA = 25 oC (Note 1a) 15 Maximum Drain Current -Pulsed 100 A Maximum Power Dissipation TC = 25 oC (Note 1) 70 TA = 25 oC (Note 1a) 3.2 PD TA = 25 oC (Note 1b) 1.3 W TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 1.8 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6670A FDD6670A 13’’ 16mm 2500 |
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