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FDD6676 Datenblatt(PDF) 4 Page - Fairchild Semiconductor

Teilenummer FDD6676
Bauteilbeschribung  30V N-Channel PowerTrench MOSFET
Download  6 Pages
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD6676 Datenblatt(HTML) 4 Page - Fairchild Semiconductor

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FDD6676 Rev. C(W)
Typical Characteristics
0
10
20
30
40
50
00.5
1
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
V
GS = 10V
3.0V
3.5V
4.5V
2.5V
0.8
1
1.2
1.4
1.6
1.8
0
1020
3040
50
ID, DRAIN CURRENT (A)
VGS = 3.0V
10V
3.5V
4.5V
6.0V
4.0V
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (
oC)
ID = 16.8A
VGS = 10V
0
0.005
0.01
0.015
0.02
2468
10
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 8.4 A
TA = 125
oC
T
A = 25
oC
Figure 3. On-Resistance Variation
withTemperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
0
10
20
30
40
50
11.522.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
T
A = 125
oC
25
oC
-55
oC
VDS = 5.0V
0.0001
0.001
0.01
0.1
1
10
100
00.2
0.4
0.6
0.811.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS = 0V
TA = 125
oC
25
oC
-55
oC
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature


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