SI8406DB datasheet(6/10 Pages) VISHAY

Teilenummer	SI8406DB

Bauteilbeschribung	N-Channel 20 V (D-S) MOSFET

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Document Number: 62530

S12-0978-Rev. A, 30-Apr-12

Vishay Siliconix

Si8406DB

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

4

8

12

16

20

0

25

50

75

100

125

150

T

C - Ambient Temperature (°C)

Package Limited

Power Derating

0

3

6

9

12

15

25

50

75

100

125

150

TC - Case Temperature (°C)

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